Journal
NANOSCALE RESEARCH LETTERS
Volume 15, Issue 1, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-020-03301-4
Keywords
Ferroelectric Hf0.5Zr0.5O2 film; Atomic layer deposition; Metal-organic precursor; Wake-up phenomenon; Interfacial layer
Funding
- Technology Innovation Program through MOTIE (Ministry of Trade, Industry, Energy) [20003634]
- Basic Science Research Program through an NRF (National Research Foundation of Korea) - Korea government (MSIT) [NRF-2018R1C1B5086580]
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The chemical, physical, and electrical properties of the atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf0.5Zr0.5O2 films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf0.5Zr0.5O2 film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 10(5) cycles, with a reasonably high double remanent polarization value of similar to 40 mu C/cm(2). The film also showed reliable switching up to 10(9) cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior.
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