Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 9, Issue 5, Pages -Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/ab981e
Keywords
Thermal property; beta-Ga2O3; diamond; Raman thermometry
Funding
- National Science Foundation [ECCS-1809077]
- Research and Education in energy, Environment, and Water (RENEW) Institute and Center of Excellence in Materials Informatics (CMI) at the University at Buffalo
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The beta-Ga2O3 nanomembrane (NM)/diamond heterostructure is one of the promising ultra-wide bandgap heterostructures that offers numerous complementary advantages from both materials. In this work, we have investigated the thermal properties of the beta-Ga2O3 NM/diamond heterostructure with three different thicknesses of beta-Ga2O3 nanomembranes (NMs), namely 100 nm, 1000 nm, and 4000 nm thick beta-Ga2O3 NMs using Raman thermometry. The thermal property-temperature relationships of these beta-Ga2O3 NM/diamond heterostructures, such as thermal conductivity and interfacial thermal boundary conductance were determined under different temperature conditions (from 100 K to 500 K with a 40 K interval). The result provides benchmark knowledge about the thermal conductivity of beta-Ga2O3 NMs over a wide temperature range for the design of novel beta-Ga2O3-based power electronics and optoelectronics. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
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