Self-Assembled Al Nanostructure/ZnO Quantum Dot Heterostructures for High Responsivity and Fast UV Photodetector

Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures (NSs), offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers. Here, we demonstrate high-performance Al NS/ZnO quantum dots (Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs. The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures, and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures. The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation. Consequently, the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to similar to 1.065 mA compared to that of the pristine ZnO device, and an outstanding photoresponsivity of 11.98 A W-1 is correspondingly achieved under 6.9 mW cm(-2) UV light illumination at 10 V bias. In addition, a relatively fast response is similarly witnessed with the Al/ZnO devices, paving a path to fabricate the high-performance UV photodetectors for applications.