Journal
AIP ADVANCES
Volume 10, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0007947
Keywords
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Funding
- Engineering and Physical Sciences Research Council [EP/P006973/1, EP/T017813/1]
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We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45 degrees. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.
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