Morphology and mobility as tools to control and unprecedentedly enhance X-ray sensitivity in organic thin-films

Organic semiconductor materials exhibit a great potential for the realization of large-area solution-processed devices able to directly detect high-energy radiation. However, only few works investigated on the mechanism of ionizing radiation detection in this class of materials, so far. In this work we investigate the physical processes behind X-ray photoconversion employing bis-(triisopropylsilylethynyl)-pentacene thin-films deposited by bar-assisted meniscus shearing. The thin film coating speed and the use of bis-(triisopropylsilylethynyl)-pentacene:polystyrene blends are explored as tools to control and enhance the detection capability of the devices, by tuning the thin-film morphology and the carrier mobility. The so-obtained detectors reach a record sensitivity of 1.3 center dot 10(4) mu C/Gy center dot cm(2), the highest value reported for organic-based direct X-ray detectors and a very low minimum detectable dose rate of 35 mu Gy/s. Thus, the employment of organic large-area direct detectors for X-ray radiation in real-life applications can be foreseen. Though organic semiconductors are attractive for high performance X-ray detection systems, the detection mechanism in organic thin films is not well understood. Here, the authors report the role of morphology and carrier mobility on X-ray sensitivity in detectors with unprecedented performance.