Journal
NATURE COMMUNICATIONS
Volume 11, Issue 1, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-020-15974-7
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Funding
- INFN through the CSN5 FIRE project
- ERC e-GAMES [StG 2012-306826]
- DGI (Spain) project FANCY [CTQ2016-80030-R]
- Generalitat de Catalunya [2017-SGR-918]
- Spanish Ministry of Economy and Competitiveness, through the Severo Ochoa Programme for Centers of Excellence in RD [SEV-2015-0496]
- FPU fellowship from the Spanish Ministry
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Organic semiconductor materials exhibit a great potential for the realization of large-area solution-processed devices able to directly detect high-energy radiation. However, only few works investigated on the mechanism of ionizing radiation detection in this class of materials, so far. In this work we investigate the physical processes behind X-ray photoconversion employing bis-(triisopropylsilylethynyl)-pentacene thin-films deposited by bar-assisted meniscus shearing. The thin film coating speed and the use of bis-(triisopropylsilylethynyl)-pentacene:polystyrene blends are explored as tools to control and enhance the detection capability of the devices, by tuning the thin-film morphology and the carrier mobility. The so-obtained detectors reach a record sensitivity of 1.3 center dot 10(4) mu C/Gy center dot cm(2), the highest value reported for organic-based direct X-ray detectors and a very low minimum detectable dose rate of 35 mu Gy/s. Thus, the employment of organic large-area direct detectors for X-ray radiation in real-life applications can be foreseen. Though organic semiconductors are attractive for high performance X-ray detection systems, the detection mechanism in organic thin films is not well understood. Here, the authors report the role of morphology and carrier mobility on X-ray sensitivity in detectors with unprecedented performance.
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