Journal
CHEMISTRY OF MATERIALS
Volume 28, Issue 22, Pages 8132-8140Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.6b01329
Keywords
-
Funding
- Thousand Talents Program for Young Researchers
- National Basic Research Program of China [2015CB654901]
- National Natural Science Foundation of China [51502130, 11474147]
- Natural Science Foundation of Jiangsu Province [SBK2015043303, BK20151383]
- Shuangchuang Program of Jiangsu Province
- International Science AMP
- Technology Cooperation Program of China [2014DFE00200]
- Fundamental Research Funds for Central Universities
- Thousand Talents Program for Young Researchers
- National Basic Research Program of China [2015CB654901]
- National Natural Science Foundation of China [51502130, 11474147]
- Natural Science Foundation of Jiangsu Province [SBK2015043303, BK20151383]
- Shuangchuang Program of Jiangsu Province
- International Science AMP
- Technology Cooperation Program of China [2014DFE00200]
- Fundamental Research Funds for Central Universities
Ask authors/readers for more resources
Colloidal nanocrystals of lead halide perovskites have recently received great attention due to their remarkable performance in optoelectronic applications (e.g., light-emitting devices, flexible electronics, and photodetectors). However, the use of lead remains of great concern due to its toxicity and bioaccumulation in the ecosystem; herein we report a strategy to address this issue by using tetravalent tin (Sn4+) instead of divalent lead (Pb2+) to synthesize stable Cs2SnI6 perovskite nanocrystals. The shapes of as synthesized Cs2SnI6 nanocrystals are tuned from spherical quantum dots, nanorods, nanowires, and nanobelts to nanoplatelets via a facile hot-injection process using inexpensive and nontoxic commercial precursors. Spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM) and simulation studies revealed a well-defined face-centered-cubic (fcc) perovskite derivative structure of Cs2SnI6 nanocrystals. The solution-processed Cs2SnI6 nanocrystal-based field effect transistors (FETs) displayed a p-type semiconductor behavior with high hole mobility (>20 cm(2)/(V s)) and high I-ON/I-OFF ratio (>10(4)) under ambient conditions. We envision that this work will pave the way to produce new families of high-performance, stable, low-cost and nontoxic nanocrystals for optoelectronic applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available