Journal
CHEMISTRY OF MATERIALS
Volume 28, Issue 12, Pages 4169-4179Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.6b00396
Keywords
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Funding
- U.S. Office of Naval Research (ONR) [N00014-13-1-0300]
- Air Force Office of Scientific Research (AFOSR) [FA9550-14-1-0251]
- National Science Foundation (NSF) under CHE [10-38015, 13-07002, 13-62931, ECCS-1430530]
- National Defense Science and Engineering Graduate Fellowship (NDSEG) through the Army Research Office (ARO)
- Beckman Foundation
- Naval Research Enterprise Intern Program (NREIP)
- National Research Council Research Associateship Award at the Naval Research Laboratory
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [1362931] Funding Source: National Science Foundation
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We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane (H3N-BH3) as a function of Ar/H-2 background pressure (P-TOT). Films grown at P-TOT <= 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger P-TOT with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and sp(3)-bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the H3N-BH3 precursor from a passivated Cu catalyst. A similar increase in h-BN growth rate and amorphization is observed even at low P-TOT if the H3N-BH3 partial pressure is initially greater than the background pressure P-TOT at the beginning of growth. h-BN growth using the H3N-BH3 precursor reproducibly can give large-area, crystalline h-BN thin films, provided that the total pressure is under 2.0 Torr and the precursor flux is well controlled.
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