Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition

We report thin, high quality n(+)type doped N-polar GaN contact layers grown using metal-organic chemical vapor deposition with carrier concentration as high as 3.5 x 10(20)cm(-3)and an electron mobility of 80 cm(2)V(-1)s(-1)at room temperature resulting in a low sheet resistance of 57.3 Omega/ and specific contact resistance of 1.7 x 10(-7)Omega.cm(2). These results were obtained via silicon doping of (000 (1) over bar) N-polar GaN grown on 4 degrees miscut sapphire substrates using a flow modulation growth scheme at a deposition temperature of 850 degrees C.