Performance enhancement ofβ-Ga2O3on Si (100) based Schottky barrier diodes using REduced SURface Field

Schottky barrier diodes (SBDs) have been fabricated laterally on a beta-Ga(2)O(3)film grown on both p-type and n-type Si (100) substrates using a pulsed laser deposition technique. The sample of Ga(2)O(3)on p-Si was further annealed at 600 degrees C to optimize device performance. Platinum (Pt) and Titanium (Ti)/Gold (Au) metal stacks have been utilized for the formation of Schottky and Ohmic contact on the Ga2O3, respectively. Considerably high breakdown voltages (V-BR) of 190, and 172 V and a significantly low on-resistance (R-on) of 330, and 15 m omega.cm(2), have been obtained for the as-deposited sample and sample annealed at 600 degrees C, respectively for lateral Ga2O3/p-Si SBDs. Moreover, a much lower V(BR)of 56 V and higher on-resistance of 970 m omega.cm(2)have been measured for Ga2O3/n-Si SBDs as compared to the Ga2O3/p-Si. The presence of REduced SURface Field effect in n-Ga2O3/p-Si based diodes is attributed to this enhancement of its V(BR)as compared to n-Ga2O3/n-Si SBDs. Moreover, the highest Baliga figure of merits (V-BR(2)/R-on) for the Ga2O3/p-Si sample annealed at 600 degrees C has been found to be 1.97 MW.cm(-2). Thus, the present article shall open up a new power device research avenue of Ga(2)O(3)on Si.