Journal
PHYSICAL REVIEW LETTERS
Volume 124, Issue 19, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.124.196601
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- Universite Grenoble Alpes
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The transport properties of MAPbI3 are analyzed within a tight-binding model. We find a strong Frohlich interaction of electron and holes with the electrostatic potential induced by the longitudinal optical phonon modes. This potential induces a strong scattering and limits the electronic mobilities at room temperature to about 200 cm(2) /V s. With additional extrinsic disorder, a large fraction of the electrons and holes are localized, but they can diffuse by following nearly adiabatically the evolution of the electrostatic potential. This process of diffusion, at a rate which is given by the lattice dynamics, contributes to the unique electronic properties of this material.
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