Journal
PHYSICAL REVIEW LETTERS
Volume 124, Issue 18, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.124.187701
Keywords
-
Categories
Funding
- DARPA through the ERI program (FRANC)
- NSF [ECCS-1554011]
- Semiconductor Research through the Global Research Collaboration program
- AFOSR [FA9550-19-1-0254]
- NSF Scalable Parallelism in the Extreme (SPX) Grant
- NSF through the UMN MRSEC program
Ask authors/readers for more resources
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)O-x formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available