Journal
PHYSICAL REVIEW LETTERS
Volume 124, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.124.156801
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Funding
- Laboratory Directed Research and Development project at Sandia National Laboratories
- U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- U.S. Department of Energy's National Nuclear Security Administration [DE-NA0003525]
- NSF [DMR 1157490]
- State of Florida
- DOE
- NSF EAGER
- Gordon and Betty Moore Foundation through the EPiQS Initiative [GBMF4420]
- National Science Foundation MRSEC Grant [DMR-1420541]
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We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors nu = 1/3, 2/5, 3/7. and its particle-hole conjugate states at filling factors 1-nu = 2/3, 3/5, 4/7. have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the nu and 1-nu states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.
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