Journal
OPTIK
Volume 220, Issue -, Pages -Publisher
ELSEVIER GMBH
DOI: 10.1016/j.ijleo.2020.164935
Keywords
InBi2Se4; Thin films; Photovoltaics; Annealing; Diffusion
Categories
Funding
- Deanship of Scientific Research at King Khalid University [R.G.P. 2/21/41]
- UTM Malaysia
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In this research work, optoelectronic properties of Indium bismuth selenide (InBi2Se4) thin films are studied for their potentials for photovoltaic applications. The InBi2Se4 films are prepared via a thermal co-evaporation technique on glass substrate using Bi2S3 powders and indium granules. The as-deposited films are then annealed at different temperatures to convert into InBi2Se4 thin films. Results show that the obtained InBi2Se4 films possess excellent optoelectronic properties as an optimum bandgap of 1.2 eV was obtained for the film annealed at 350 degrees C. Based on characterization results of current and voltage realiationships, both as-deposited and annealed InBi2Se4 thin films show a linear relationship between current and annealing temperature. It was also noted that with increasing grain-size of the film, the current is also increased at a fixed applied voltage.
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