Journal
OPTICS LETTERS
Volume 45, Issue 12, Pages -Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.394121
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Funding
- Defense Advanced Research Project Agency [W911NF-19-C-0003]
- National Science Foundation [DMR 1720256]
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Ultra-low-loss waveguide fabrication typically requires high-temperature annealing beyond 1000ffiC to reduce the hydrogen content in deposited dielectric films. However, realizing the full potential of an ultra-low loss will require the integration of active materials that cannot tolerate high temperature. Uniting ultra-low-loss waveguides with on-chip sources, modulators, and detectors will require a low-temperature, low-loss dielectric to serve as a passivation and spacer layers for complex fabrication processes. We report a 250 degrees C deuterated silicon dioxide film for top cladding in ultra-low-loss waveguides. Using multiple techniques, we measure propagation loss below 12 dB/m for the entire 1200-1650 nm range and top-cladding material absorption below 1 dB/m in the S, C, and L bands. (C) 2020 Optical Society of America
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