Journal
OPTICAL ENGINEERING
Volume 59, Issue 4, Pages -Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.OE.59.4.040502
Keywords
single-photon avalanche diode; optoelectronic integrated circuits; modulation doping; photodetectors; adjustable breakdown voltage
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Funding
- Austrian Science Fund (FWF) [P28335-N30]
- Austrian Science Fund (FWF) [P28335] Funding Source: Austrian Science Fund (FWF)
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We investigate single-photon avalanche diodes with a thick absorption zone leading to a high photon detection probability in the near-infrared spectrum, e.g., to 27.9% at 850 nm. Furthermore, modulation doping for tuning the breakdown voltage in single-photon avalanche diodes is used. Modulation doping allows for reduction of the effective doping in the structure during the design phase without process modifications. We compare a modulation doped version with a single-photon avalanche diode not using this technique. We prove that both versions are operational. The modulation doped version shows a reduced dark count rate and afterpulsing probability at the cost of a reduced photon detection probability. (C) 2020 Society of Photo-Optical Instrumentation Engineers (SPIE)
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