Journal
NANOTECHNOLOGY
Volume 31, Issue 25, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab80fe
Keywords
2D materials; molecular beam epitaxy; electron microscopy; atomic force microscopy; x-ray diffraction
Funding
- Agence nationale de la recherche ANR-MAGICVALLEY [ANR-18-CE24-0007]
- LANEF framework [ANR-10-LABX-5101]
- Agence Nationale de la Recherche (ANR) [ANR-18-CE24-0007] Funding Source: Agence Nationale de la Recherche (ANR)
Ask authors/readers for more resources
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe2 on 15 x 15 mm large mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature (>900 degrees C) and very low deposition rate (<0.15 angstrom min(-1)) are necessary to obtain high quality WSe2 films. The domain size can be as large as 1 mu m and the in-plane rotational misorientation of 1.25 degrees. The WSe2 monolayer is also robust against air exposure, can be easily transferred over 1 cm(2) on SiN/SiO2 and exhibits strong photoluminescence signal. Moreover, by combining grazing incidence x-ray diffraction and transmission electron microscopy, we could detect the presence of few misoriented grains. A two-dimensional model based on atomic coincidences between the WSe2 and mica crystals allows us to explain the formation of these misoriented grains and gives insight to achieve highly crystalline WSe2.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available