Journal
NANO LETTERS
Volume 20, Issue 6, Pages 4618-4624Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c01484
Keywords
Carbon nitride; photoelectrochemical cells; water splitting; photoanode
Categories
Funding
- European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program [849068]
- Israel Science Foundation (ISF) [1161/17]
- ISF-NSFC [2969/19]
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Polymeric carbon nitride (CN) has emerged as a promising semiconductor in photoanodes for photoelectrochemical cells (PECs) owing to its suitable electronic structure, tunable band gap, high stability, and low price. However, the poor electron diffusion within the CN layer and hole extraction to the solution still limit its applicability in PECs. Here, we report the fabrication of a CN photoanode with excellent electron diffusion length and remarkable hole extraction properties by careful design of its electronic interfaces. We combine complementary synthetic approaches to grow tightly packed CN layers forming a type-II heterojunction, which results in a CN photoanode with excellent charge separation, high electronic conductivity, and remarkable hole extraction efficiency. The optimized CN photoanode displays excellent PEC performance, reaching up to 270 mu A cm(-2) in a 0.1 M KOH solution at 1.23 V vs RHE, extremely low onset potential (similar to 0.0012 V), and long-term stability up to 18 h.
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