Journal
NANO LETTERS
Volume 20, Issue 6, Pages 4573-4579Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c01428
Keywords
Graphene; Spin-orbit proximity; Spin Hall effect; Rashba-Edelstein effect
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Funding
- Spanish MINECO, under the Maria de Maeztu Units of Excellence Programme [MDM-2016-0618]
- European Union H2020 under the Marie Curie Actions [794982-2DSTOP, 766025-QuESTech]
- Spanish MINECO [FJC2018-038688-I, BES-2017-07963, RTI2018-094861-B-100]
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Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration, or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizable spin Hall effect, a spin-tocharge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition-metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate the spin Hall effect up to room temperature in graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect arises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications.
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