Journal
NANO LETTERS
Volume 20, Issue 6, Pages 4437-4444Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c01222
Keywords
Two-dimensional materials; defect engineering; scanning tunneling microscopy; helium ion microscopy
Categories
Funding
- Deutsche Forschungsgemeinschaft (DFG) through the German Excellence Strategy via the Munich Center for Quantum Science and Technology (MCQST) [EXC-2111-390814868, EXC 2089/1-390776260]
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- TUM International Graduate School of Science and Engineering (IGSSE)
- Bavaria California Technology Center (BaCaTeC)
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Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS2 by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS2 upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.
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