Journal
NANO LETTERS
Volume 20, Issue 6, Pages 4144-4152Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c00002
Keywords
2D devices; unipolar memristors; memtransistors; in-memory computing
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Funding
- National Key R&D Program of China [2018YFA0703700, 2016YFA0200700]
- National Natural Science Foundation of China [61625401, 61851403, 61974036, 91964203, 61804035]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication
- Youth Innovation Promotion Association CAS
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Two-dimensional materials have been widely used in electronics due to their electrical properties that are not accessible in traditional materials. Here, we present the first demonstration of logic functions of unipolar memristors made of functionalized HfSe2-xOx flakes and memtransistors made of MoS2/graphene/HfSe2-xOx van der Waals heterostructures. The two-terminal memristors exhibit stable unipolar switching behavior with high switching ratio (>10(6)), high operating temperature (106 degrees C), long-term endurance (>10(4) s), and multibit data storage and can operate as memory latches and logic gates. Benefiting from these superior memristive properties, the three-terminal heterostructure memtransistors show wide tunability in electrical switching behaviors, which can simultaneously implement logic operation and data storage. Finally, we investigate their application prospect in logical units with memory capability, such as D-type flip-flop. These results demonstrate the potential of two-dimensional materials for resistive switching applications and open up an avenue for future in-memory computing.
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