Journal
MICROELECTRONIC ENGINEERING
Volume 229, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mee.2020.111358
Keywords
RRAM; Synaptic plasticity; Neuromorphic computing; Spike-timing; Oxygen vacancies; Conducting filaments
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Funding
- programme of State Scholarships Foundation (IKY) -by the European Union (European Social Fund -ESF)
- Greek national funds through the action entitled Strengthening Human Resources Research Potential via Doctorate Research -2nd Cycle
- project Optimization of vacuum thin film and nanoparticle technologies - Operational Programme Competitiveness, Entrepreneurship and Innovation (NSRF 2014-2020) [MIS5002772]
- European Union (European Regional Development Fund)
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The incorporation of a TaOy layer in a HfOx/TaOy/HfOx resistive switching memory stack results in low-power (similar to nW in pulsing mode) and forming-free operation. With this material configuration, we derive a stable memory window (similar to 10(2)), good cycling variability (sigma/mu < 0.6) and robust pulse endurance (10(6)). The switching phenomenon is confined in the TaOy layer because of its higher oxygen content and deeper oxygen vacancy levels in contrast to the surrounding HfOx layers that act as series resistances. This enables the manifestation of analog switching characteristics, sub-pJ energy consumption for both SET and RESET transitions, enhanced synaptic weight modulation, Spike-Timing-Dependent-Plasticity and short-term plasticity effects of our devices that play an important role in emulating the function of a biological synapse.
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