Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 110, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.104957
Keywords
ZnO; RF sputtering; Annealing; Self-powered; UV photodetectors; Solar-blind
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In this paper, novel self-powered, solar-blind UV photodetector (PD) designs based on a ZnO thin-film with engineered back metal layer (BML) were fabricated by RF magnetron sputtering and e-beam evaporation techniques. An exhaustive study concerning the impact of dissimilar BML (Au and Ni) on the device structural, optical and electrical properties was carried out. The measured I-V curves illustrated an asymmetrical behavior, enabling a clear and distinctive photovoltaic mode. Superb sensitivity of 10(7), high I-ON/I-OFF ratio of 149dB, ultralow dark-noise current less than 11pA and responsivity exceeding 0.27A/W were reached for the prepared ZnO-based UV-PDs in self-powered mode. The role of the engineered BML in promoting effective separation and transfer of the photo-induced carriers was discussed using the band-diagram theory. The influence of the annealing process on the UV-sensor performance was also investigated. The annealed device at 500 degrees C demonstrated a lower dark current of a few picoamperes and a high rejection ratio of 2.2 x 10(3), emphasizing its exciting visible blindness characteristics. Therefore, the use of an engineered BML with optimized annealing conditions open up new perspectives to realizing high-performance, self-powered solar-blind UV-PDs based on simple thin-film-ZnO structure strongly desirable for various optoelectronic applications.
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