Demonstration of 2D MXene memristor: Stability, conduction mechanism, and synaptic plasticity

As the emerging device for neuromorphic applications, memristive device is arguable regarded as the most promising candidate to emulate biological synapse due to its specific analog behaviors and various plasticities. Nevertheless, the stability of memristive device remains an extreme challenge limiting its practical applications. In this work, two-dimensional (2D) material MXene is introduced into TiN/Cu/SiO2/TiN device as an insertion layer. The existence of MXene leads the memristor to perform more stable resistance states. The dominant conduction mechanisms responsible for stable resistance states are consistent with space charge limited and Ohmic conductions. In addition, synaptic plasticities, including long-term potentiation and depression, have been successfully mimicked by MXene memristors. (C) 2020 Published by Elsevier B.V.