Investigation of dielectric and electrochemical behavior of CaCu3-xMnxTi4O12 (x=0, 1) ceramic synthesized through semi-wet route

In this study, we report the effect of manganese doped and non-doped CCTO ceramic (CaCu3-xMnxTi4O12, x = 0, 1) synthesized through semi-wet route. The phase formation of both ceramic were confirmed by the XRD pattern. The Microstructural studies (CCTO and CCMTO) were performed through HR-SEM, TEM, and AFM. Both the sample were characterized by dielectric properties, cyclic voltammetry and Electrochemical Impedance spectroscopy. The dielectric properties (epsilon') were observed to be epsilon' similar to 10(4) and 5 x 10(3) over the wide range of frequency 10 Hz to 100 kHz of CCTO and CCMTO ceramic respectively. The tangent loss (tan delta = 0.75) had observed for CCMTO ceramic which is less than that observed for CCTO ceramic (tan delta = 3.2). The high value of the dielectric constant of both CCTO and CCMTO ceramic may be attributed to the internal barrier layer capacitance (IBLC) mechanism of semiconducting grains with insulating grain boundaries. The oxidation state of the elements were confirmed by X-ray photoelectron spectroscopy.