4.3 Article

Metal Hydrides: Epitaxial Growth and Electronic Properties

Journal

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
Volume 89, Issue 5, Pages -

Publisher

PHYSICAL SOC JAPAN
DOI: 10.7566/JPSJ.89.051012

Keywords

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Funding

  1. JST-PRESTO [JPMJPR17N6]
  2. JST-CREST [JPMJCR1523, JP19H02596, JP19H04689, JP17H05216, JP15H05546, 18H01727, JP18H03876, JP18H05514, JPH050518]
  3. TEPCO Memorial Foundation
  4. Tokyo Institute of Technology-AGC Materials Collaborative Research Center
  5. Tohoku University Institute of Gold Research [16K0025, 17K0060, 18K0095, 19K0060]
  6. Grants-in-Aid for Scientific Research [18H01727] Funding Source: KAKEN

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Reports of superconductivity at temperatures above 200K in high-pressure hydrogen sulfide (H2S) had generated great interest in metal hydrides and their physical properties. For the progress in both fundamental understanding and device application of metal hydrides, studies using single crystals or epitaxial thin films are essential. However, to date, a few metal hydride single crystals and epitaxial thin films have been fabricated, and both fundamental and applied research on these materials remain elusive compared with oxides and nitrides. This article reviews the recent body of work that aims to establish a metal-hydride epitaxial thin film synthesis technology, and to search for new metal-hydride functionalities; it focuses on the epitaxial growth and properties of metal hydrides.

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