Integrated Er/Si Schottky Photodetectors on the end facet of optical waveguides

In the last two decades there has been growing interest in silicon photonics and in the possibility to integrate new materials to overcome the silicon intrinsic limitations. Erbium has represented a viable solution for the realization of light sources at telecommunications wavelengths opening the path to the investigation of various photonic devices based on rare earth. In this work we investigate a photodetector operating at 1550 nm whose detection mechanism is based on the internal photoemission effect through an Er/Si Schottky junction. The Er/Si junction has been carefully electrically characterized showing a potential barrier and cut-off wavelength of 0.59 eV and 2105 nm, respectively. Moreover, a responsivity of 0.62 mA/W has been measured for a 3 mu m-width waveguide at 1550 nm and at reverse voltage of -8 V. Finally, the noise equivalent power of the device has been evaluated as high as 0.53 nW/(Hz)(1/2) at -8 V. Even if device responsivity is still low, we believe that our insights may suggest Er/Si as a new platform for the integration of various optical functionalities on the same chip opening new frontiers in the field of low-cost silicon micro and nanophotonics.