Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 11, Issue 9, Pages 3681-3688Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.0c01048
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Funding
- Engineering and Physical Sciences Research Council (EPSRC), U.K.
- EPSRC Centre for Doctoral Training (CDT) for Science and Applications of Plastic Electronic Materials
- EPSRC CDT for New and Sustainable Photovoltaics
- Rhodes Trust through a Rhodes Scholarship
- Oxford-Radcliffe Scholarship
- Alexander-von-Humboldt foundation
- EPSRC [EP/S004947/1, EP/P033229/1, EP/P006329/1] Funding Source: UKRI
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Successful chemical doping of metal halide perovskites with small amounts of heterovalent metals has attracted recent research attention because of its potential to improve long-term material stability and tune absorption spectra. However, some additives have been observed to impact negatively on optoelectronic properties, highlighting the importance of understanding charge-carrier behavior in doped metal halide perovskites. Here, we present an investigation of charge-carrier trapping and conduction in films of MAPbBr(3) perovskite chemically doped with bismuth. We find that the addition of bismuth has no effect on either the band gap or exciton binding energy of the MAPbBr(3) host. However, we observe a substantial enhancement of electron-trapping defects upon bismuth doping, which results in an ultrafast charge-carrier decay component, enhanced infrared emission, and a notable decrease of charge-carrier mobility. We propose that such defects arise from the current approach to Bi-doping through addition of BiBr3, which may enhance the presence of bromide interstitials.
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