Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 20, Issue 5, Pages 3283-3286Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2020.17426
Keywords
Ga2O3 Thin Film; Resistive Switching; Metal/Insular/Metal; Oxygen Vacancy
Categories
Funding
- National Natural Science Foundation of China [51602276, 61274056]
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Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultra-wide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I-V characteristics of Au/Ti/beta-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.
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