Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 31, Issue 14, Pages 11095-11100Publisher
SPRINGER
DOI: 10.1007/s10854-020-03658-3
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Bismuth sulphide polycrystalline thin films have been synthesized on amorphous templates by dip method. In this synthesis process, malonic acid acts as a complexing agent. This controls the concentration of bismuth ions in the reactive mixture. Structural analysis confirms the deposited films show the orthorhombic phase. Various crystallographic parameters were estimated. The morphological investigation showed minute rods uniformly distributed. The ratio of Bi:S is about 2:3. Optical studies indicate an absorbance decrease as wavelength decreases with an optical gap of 1.72 eV. The activation energies are 0.083 for lower energy region and 0.210 eV for higher energy region. The semiconducting nature is indicated by electrical measurement. The magnitude of optical energy and semiconducting nature of bismuth sulphide designates suitable for solar applications.
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