Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 31, Issue 14, Pages 11131-11140Publisher
SPRINGER
DOI: 10.1007/s10854-020-03662-7
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We investigate the influences of W/Ni co-doping on the structural, magnetic, electrical, and optical properties of four-layered Aurivillius Bi(5)FeTi(3)O(15)ceramics. All the specimens can be indexed with the orthorhombic structure and the space group of A2(1)am. The incorporation of W/Ni significantly promotes the grain's growth and compactness. Compared with the antiferromagnetic state in pure sample, a weak room-temperature ferromagnetic state is found in the doped samples. The dielectric relaxations in samples withx <= 0.1 follow with Vogel-Fulcher relation and can be ascribed to the fluctuation behavior of local polarization, whereas the dielectric relaxation in samplex = 0.15 obeys well Arrhenius law and is due to the localized hopping process of electrons. The piezoelectric measurements indicate that the compositionx = 0.05 represents the largest d(33)value of 14pC/N at room temperature, which can be attributed to the optimal conductivity. In addition, all the compositions have two absorption edges with the direct inter-band transition due to the electron excitation from the hybridized Bi 6s + O 2p + Fet(2g)valence band to Fee(g)and Ti 3dconduction bands.
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