Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 31, Issue 9, Pages 6786-6795Publisher
SPRINGER
DOI: 10.1007/s10854-020-03237-6
Keywords
-
Categories
Funding
- Council of Scientific and Industrial Research (CSIR), Government of India [09/1156(0004)/18-EMR-I]
- WB DST, Govt. of West Bengal, India [674(Sanc)/ST/P/ST/15G/5/2016]
Ask authors/readers for more resources
A-site doping of BaBi2NbTaO9 by Ni2+ was synthesized by chemical precursor solution decomposition method. The materials exhibited single-phase tetragonal structure. The crystallite size of the calcined powder exhibited 42 nm with high degree of tetragonality. Curie temperature (T-c) was not found upto 600 degrees C that indicated higher T-c of the material. Impedance spectroscopy showed non-Debye type of relaxation with semiconducting nature. The closeness of the activation energy for imaginary impedance relaxation and DC conductivity indicated same type of charge carriers. P-E hysteresis loop indicated ferroelectric properties of the material. Energy storage densities were calculated for charge and discharge. The highest energy efficiency was observed at 10 kV/cm electric field.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available