Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 31, Issue 10, Pages 7871-7879Publisher
SPRINGER
DOI: 10.1007/s10854-020-03325-7
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For spintronic devices, the room temperature ferromagnetism in dilute semiconductors is essential. We report here the successful preparation of (In1-xGdx)(2)O-3 [x = 0, 0.05, 0.10] by auto-combustion method. The powder XRD and SAED data confirmed the formation of single-phase cubic bixbyite In2O3. The particles are in the range of 18-22 nm size. Raman spectra showed doping of Gd3+ ions in the In2O3 lattice. The 3+ valence state of In and Gd was confirmed from XPS and XAS techniques. The magnetic hysteresis loop and EPR spectra showed the weak ferromagnetism in (In(0.90)Gdn(0.10))(2)O-3, while the pure In2O3 is diamagnetic and (In(0.95)Gdn(0.05))(2)O-3 is paramagnetic. To our knowledge, it is the first study to report the RTFM in Gd-doped In2O3 nanoparticles.
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