4.7 Article

Precipitation on stacking faults in Mg-9.8wt%Sn alloy

Journal

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Volume 45, Issue -, Pages 230-240

Publisher

JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2019.11.024

Keywords

Heterogeneous precipitation; HAADF-STEM; Shockley partial dislocation; Frank partial dislocation; Dislocation reaction

Funding

  1. National Natural Science Foundation of China [51771036, 51131009, 51421001]
  2. National Key Research and Development Program of China [2016YFB0700402]
  3. Graduate Student Research Innovation Project of Chongqing University
  4. State Administration of Foreign Experts Affairs of China
  5. Australian Research Council
  6. Ministry of Education [B16007]

Ask authors/readers for more resources

In this work, we have systematically investigated precipitation of beta'-Mg3Sn phase on intrinsic stacking faults I-1 and I-2 in a Mg-9.8 wt%Sn alloy using aberration-corrected scanning transmission electron microscopy. All observed I-1 faults are generated by the dissociation of c + a perfect dislocations and bounded by Frank partial dislocations having a Shockley component. Precipitation of beta' on I-1 involves a shear of 1/3 <01<(1)over bar>0>(alpha), similar to its formation directly from the alpha-Mg matrix. The beta' phase often nucleates at one end of an I-1 fault due to the interaction between shear strain fields of beta' and the Shockley component of the Frank partial at that end, and subsequently grows towards the other end of the fault. When the beta' reaches to the other end, the Shockley partial bounding the lengthening end of the beta' reacts with the Frank partial bounding the fault, generating an a perfect dislocation that can glide away from the precipitate and the fault. The observed I-2 faults are generated by the dissociation of a perfect dislocations and bounded by Shockley partials. Precipitation of beta' on I-2 does not need a shear of 1/3 <01 -1 0>(alpha), since the pre-existing I-2 fault already provides an ABCA four-layer structure of beta'. Thickening of the beta' that has already formed on the I-2 involves the successive occurrence of three crystallographically equivalent shears of 1/3 < 01 -1 0>(alpha) on every second (0002)(alpha) plane of the alpha-Mg matrix. Although this thickening mechanism is similar to that of the beta' formed directly from the alpha-Mg matrix, an a perfect dislocation will be produced when the beta' is thickened to eight layers, and it can again glide away from the precipitate and the fault. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available