Journal
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY
Volume 88, Issue -, Pages 106-110Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.jiec.2020.03.029
Keywords
Quantum dot; Indium phosphide; Gallium phosphide; Alloy nanoparticles
Funding
- National Research Foundation (NRF) - Korean government [NRF-2019R1A2C1010435]
- international research program of Korea Institute of Science and Technology (KIST) [2E28070]
- U-K Brand of UNIST [1.190093.01]
- Ministry of Science & ICT (MSIT), Republic of Korea [2E28070] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report synthesis of colloidal quantum dots (CQDs), indium gallium phosphide with zinc sulphide shell (In1-xGaxP@ZnS) by a hot injection method and investigate effects of In/Ga ratio on the optical properties of the obtained CQDs. The bandgap of CQDs (1.34-3.54 eV) is controlled by the In/Ga ratio without the quantum confinement effect. The photoluminescence (PL) quantum yield is also dependent on the In/Ga ratio, and temperature dependent PL results show that the randomness of crystal lattice is the most influential parameter. These results show that the In1-xGaxP alloy CQDs can be useful for absorbing the whole range of visible light. In addition, this article can provide background knowledge regarding effect of core metal composition on the optical properties of produced CQDs. (C) 2020 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
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