Journal
JOURNAL OF CRYSTAL GROWTH
Volume 537, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2020.125602
Keywords
Thermometry; Molecular beam epitaxy; Topological insulators
Funding
- ERC Advanced Grant (project 4-TOPS)
- DFG [SFB 1170, SPP 1666]
- Bayerisches Staatsministerium fur Wissenschaft und Kunst (ENB IDK TOIS, ITI)
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The material system (Hg,Cd)Te is a prototype system for topological insulators and Dirac semi-metals. Molecular beam epitaxy is the preferred method for the growth of (Hg,Cd)Te epilayer heterostructures and CdTe-HgTe core-shell nanowires. Unfortunately, the high crystalline quality desired for charge transport investigations is only achieved for a very narrow window of the growth temperature. Additionally, the low growth temperature requires a special thermometry. Here, we demonstrate the improvement of the growth of (Hg,Cd)Te epilayer heterostructures and CdTe nanowires by the use of band edge thermometry. We show that even for narrow-gap materials band edge thermometry provides a suitable method to control the temperature directly at the growth front with a high precision and reproducibility, in contrast to a conventionally used thermocouple.
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