Journal
CHEMICAL COMMUNICATIONS
Volume 52, Issue 73, Pages 10988-10991Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6cc04052g
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Funding
- National Natural Science Foundation of China [51272296]
- Chongqing Graduate Student Research Innovation Project [CYB15046]
- National Science Foundation [DMR-1205670]
- Air Force Office of Scientific Research [FA9550-12-1-0159]
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In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.
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