Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 823, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.153752
Keywords
Semiconductors; Grain boundaries; Point defects; Recombination and trapping; Electron paramagnetic resonance; Photoconductivity and photovoltaics
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Funding
- Operational Program Research, Development and Education - European Structural and Investment Funds
- Czech Ministry of Education, Youth and Sports [SAFMAT - CZ.02.1.01/0.0/0.0/16_013/0001406]
- MEYS [LM2015088, LO1409]
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The bulk polycrystalline (pc) 3C SiC of n- and p-type obtained by thermal decomposition of methyltrichlorosilane vapor have been studied by applying the electron paramagnetic resonance (EPR), direct current (DC) conductivity, photoconductivity (PC) and PC time-resolved decay methods. The energy level of the two donor-like minority carrier traps at epsilon(1) = 77 meV and epsilon(2) = 92.6 meV located at the grain boundaries (GB) of pc-3C SiC has been obtained using the measurements of the temperature dependence of DC conductivity and PC in the range of 80-600 K. The minority carrier traps assigned to carbon and silicon dangling bonds with the carbon back bonds were observed in the EPR spectra of pc-3C SiC of n- and p-type at g = 2.0029(3), g = 20042(3), respectively. The PC time decay after the termination of the photo-excitation was studied in monocrystalline and pc-3C SiC of n- and p-type at 80 K. The persistent relaxation of PC has been described by kinetic equations accounting the trapping, ionization, and recombination processes of non-equilibrium charge carriers bound dynamically to shallow donors and acceptors. We have concluded that the main process responsible for the long-lived relaxation of the PC is trap-assisted electron-hole recombination in n-type pc-3C SiC and ionization of boron acceptors, as well as the hole escape/capture at the boron level in p-type pc-3C SiC. The differences in the relaxation process of the PC in n- and p-type pc-3C SiC were explained by the presence of the potential barrier height of about 8.6 meV at GB for the capture of the majority carriers in p-type pc-3C SiC. (C) 2020 Elsevier B.V. All rights reserved.
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