Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 823, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.153727
Keywords
Magnetic thin films and multilayers; Crystal growth; Magnetoresistance; Domain structure; Magnetic measurements
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Funding
- Creative Materials Discovery Program through the National Research Foundation of Korea [2015M3D1A1070465]
- Samsung Electronics' University RD Program
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The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Neel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA.Oe is obtained. (C) 2020 Elsevier B.V. All rights reserved.
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