Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 35, Issue 5, Pages 4925-4933Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2019.2947075
Keywords
Frequency-dependent characteristics; gallium nitride (GaN); high-frequency power converter; layout; ON-resistance
Categories
Funding
- Civil Aerospace Technology Research Project in Advance [B0202]
- China Postdoctoral Science Foundation [2018M643647]
- National Postdoctoral Program for Innovative Talents [BX201800004]
- National Natural Science Foundation of China [51907155]
- Power Electronics Science and Education Development Program of Delta Group
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The switching frequencies of the GaN-based power converters have been pushed to several megahertz and even higher. At such high frequencies, the ON-resistances of the GaN devices might be much higher than their dc values, especially for the devices with low ON-resistances. The frequency-dependent characteristics of the ON-resistance are studied through the electrical and thermal experiments for the first time in this article. A device model for the finite element simulation is proposed to illustrate the mechanism. The results show that the frequency-dependent characteristics of the ON-resistance are closely related to the current distribution inside the GaN device and affected by the layout. A 4-depth ladder circuit model is proposed to describe the frequency-dependent ON-resistance of the GaN devices, and it proves a good accuracy in the frequency range of interest. Beside, two GaN-based 10 MHz dc-dc converters were designed, the only difference of which comes from the layout around GaN devices. The experimental results show that the efficiency of the converter with the optimized layout can be improved by around 2%.
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