Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 4, Pages 1619-1624Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2975211
Keywords
Amorphous indium-gallium-zinc oxide (a-IGZO); heated sputtered deposition; magnesium (Mg); thin-film transistor (TFT)
Funding
- National Natural Science Foundation of China (NSFC) [61574003, 61774010, 61904006]
- Shenzhen Municipal Scientific Program [GGFW20170728163447038, JCYJ20180504165449640]
- Natural Science Foundation of Guangdong Province [2019A1515011951]
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Magnesium (Mg)-induced metallization of amorphous indium-gallium-zinc-oxide (a-IGZO) films is investigated to develop a self-aligned (SA) top-gate (SATG) a-IGZO thin-film transistor (TFT) technology. The high-conductive and SA a-IGZO source/drain (S/D) regions are well realized by a short time of sputtered deposition of Mg onto the a-IGZO film on a heated substrate, followed by the removal of the spare Mg on the surface in hot water. It is shown that the resistivity of the a-IGZO films is lowered to about 4 x 10(-3) Omega cm from over 10(4) Omega cm with a 36-s Mg deposition at 300 degrees C. The metallization effect is believed to be the consequence of a large number of donor-like defects (oxygen vacancies) generated by oxidation-reduction reaction at the interface between the Mg and a-IGZO films. The SATG a-IGZO TFTs fabricated by the proposed technology show excellent electrical characteristics, such as a fieldeffect mobility of 19.5 cm(2)V(-1)s(-1), a subthreshold swing of 0.19 V/dec, an ON-/OFF-current ratio of over 10(9), a low S/D series resistance of 2.1 Omega cm, a small channel length shrinking of around 0.1 mu m, and a high stability against electrical stresses.
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