Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 4, Pages 1382-1393Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2963911
Keywords
1T-1C; access device; dynamic random access memory (DRAM) chips; DRAM; vertical transistor
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This article reviews the status, the challenges, and the perspective of 1T-1C dynamic random access memory (DRAM) chip. The basic principles of the DRAM are presented, introducing the key functional aspects and the structure of modern devices. We present the most relevant historical trends for different modules of the memory chip, such as access device and storage element, reviewing some of the technological challenges faced by industry to guarantee the device shrinking imposed by the economic law. The most recent solutions introduced by the industry in modern DRAM devices for the critical elements are presented. Finally, a survey of the most critical bottleneck for future development is presented, reviewing some of the potential trends and perspectives of DRAM development.
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