Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region

The super junction has been the most important concept for the design of power devices. However, there are still two problems when the conventional super-junction techniques are applied on lateral power devices: a large portion of the drift region is occupied by a p-type region, and the super junction techniques are not suitable for the gallium nitride-based high electron mobility transistor (GaN-HEMT). To solve the problems, a super field plate (SuFP) technique is proposed as a charge balance principle. Our analyses proved that the SuFP can provide a charge balance effect for a lateral double diffused MOS (LDMOS) without occupying the drift region. As a result, the LDMOS with SuFP has a better performance than the LDMOS with other charge balance realization techniques. Moreover, as a kind of field plate, the SuFP is also suitable for GaN-HEMT. Thereby, the proposed SuFP technique overcomes the two problems in conventional super-junction techniques and is significant for lateral power devices.