Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 5, Pages 2218-2222Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2981264
Keywords
Charge balance; field plate; gallium nitride; high electron mobility transistor (HEMT); super junction
Funding
- Natural Science Foundation of Shandong Province [ZR2018BF025, ZR2017JL027, ZR2019BF013]
- National Natural Science Foundation of China [61604060, 61601198, 61805101]
- Shandong Province Key Research and Development Program [2019RKB01023]
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The super junction has been the most important concept for the design of power devices. However, there are still two problems when the conventional super-junction techniques are applied on lateral power devices: a large portion of the drift region is occupied by a p-type region, and the super junction techniques are not suitable for the gallium nitride-based high electron mobility transistor (GaN-HEMT). To solve the problems, a super field plate (SuFP) technique is proposed as a charge balance principle. Our analyses proved that the SuFP can provide a charge balance effect for a lateral double diffused MOS (LDMOS) without occupying the drift region. As a result, the LDMOS with SuFP has a better performance than the LDMOS with other charge balance realization techniques. Moreover, as a kind of field plate, the SuFP is also suitable for GaN-HEMT. Thereby, the proposed SuFP technique overcomes the two problems in conventional super-junction techniques and is significant for lateral power devices.
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