Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
Volume 67, Issue 5, Pages 1507-1515Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2020.2971108
Keywords
Single photon avalanche diode (SPAD); complementary metal-oxide semiconductor (CMOS); modelling and simulations; dark count rate (DCR); technology CAD (TCAD); Matlab
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Funding
- CNES
- Airbus Defence and Space
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In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology Computer-Aided Design (TCAD) simulations and a Matlab routine.
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