4.5 Article

Effects of HTL and ETL Thicknesses on the Performance of PQT-12/PCDTBT:PC61 BM/ZnO QDs Solar Cells

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 32, Issue 12, Pages 677-680

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2020.2991536

Keywords

Bulk heterojunction; floating film transfer method (FTM); PCDTBT; PQT-12; solar cells

Funding

  1. Science and Engineering Research Board (SERB), India
  2. Centre for Energy and Resource Development (CERD), IIT (BHU), Varanasi

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In this letter, floating film transfer method (FTM) based poly (3, 3'- dialkylquaterthiophene) (PQT-12) hole transfer layer (HTL) has been explored for the performance improvement of poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2', 1', 3'-benzothiadiazole)]:[6,6]-phenylC61butyric acid methyl ester (PCDTBT:PC61 BM) based bulk heterojunction (BHJ) solar cells. The BHJ is formed by sandwiching PCDTBT:PC61 BM between FTM coated PQT-12 HTL and spin-coated ZnO quantum dots (QDs) electron transport layer (ETL). The better phase matching of FTM deposited PQT-12 HTL to the PCDTBT:PC61 BM based blend polymeric active layer along with the visible absorption spectrum of the PQT-12 enhances the energy harvesting capability of the solar cell structure. The solar cell performance parameters such as the open circuit voltage (V-OC), short circuit current density (J(SC)), fill factor ( FF) and power conversion efficiency ( PCE) are investigated for similar to 20 to 60 nm thin PQT-12 and similar to 20 to 35 nm thin ZnO films. The obtained V-OC, J(SC), FF, and PCE are 0.672 V, 10.42 mA/cm(2), 38%, and 2.66%, respectively for similar to 20 nm PQT-12 and similar to 35 nm ZnO QDs.

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