Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 4, Pages 601-604Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2971263
Keywords
Gallium nitride; series diode; TiN anode; temperature sensor
Categories
Funding
- National Key Research and Development Program [2017YFB0403000]
- Fundamental Research Funds for The Centered Universities [18lgpy22]
- National Natural Science Foundation of China [61904207]
Ask authors/readers for more resources
Temperature sensor using series GaN Schottky barrier diode (SBD) with TiN anode was fabricated and evaluated extensively. The diode presents good characteristics in a wide temperature range from 25 degrees C to 200 degrees C. The temperature dependent forward voltage of the conventional 8-finger SBD at a fixed current shows good linearity, resulting in a sensitivity of approximately 1.14 mV/K. On the other hand, the series SBD with two 8-finger diodes enhances the sensitivity by nearly two times. The enhancement in temperature sensitivity is interpreted using a series model, with the obtained parameters are comparable with the 8-finger SBD.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
