Journal
CERAMICS INTERNATIONAL
Volume 42, Issue 1, Pages 1627-1632Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2015.09.114
Keywords
Thin film; Bismuth titante; PFM; Piezoelectric
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Funding
- NNSF of China [51272158]
- China Postdoctoral Science Foundation [2014M551427]
- Hujiang Foundation of China [B14006]
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Polycrystalline piezoelectric lead-free 85 mol% (Bi0.5Na0.5)TiO3-10 mol% (Bi0.5K0.5)TiO3-5 mol% BaTiO3 (85BNT-10BKT-5BT) thin films were fabricated at different annealing temperatures by a chemical solution deposition method on Pt/Ti/SiO2/Si substrates. Perovskite phase was achieved during annealing at 650-800 degrees C. The effect of annealing temperature on piezoelectric and mechanical properties was investigated. The results show that 85BNT-10BKT-5BT thin films annealed at 700 degrees C exhibit the largest effective d(33) value of 140.4 pm/V, and the highest elastic modulus 142.0 GPa. The optimal properties can be attributed to dense domain and homogenous microstructure. Results show that 85BNT-10BKT-5BT thin films may be a good candidate for lead-free piezoelectric-based micro-electromechanical systems. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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