Journal
DIAMOND AND RELATED MATERIALS
Volume 105, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2020.107797
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Funding
- University of Siegen
- German Research Association (DFG) [INST 221/118-1 FUGG, 410405168]
- Hasselt University Special Research Fund (BOF)
- Research Foundation Flanders (FWO)
- Methusalem NANO network
- COST (European Cooperation in Science and Technology) [MP 1403]
- INFN-CHNet, the network of laboratories of the INFN for cultural heritage
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The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at low Si-ion implantation fluences.
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