Journal
CRYSTAL GROWTH & DESIGN
Volume 20, Issue 6, Pages 3801-3806Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.0c00095
Keywords
-
Funding
- Spanish Ministry of Economy, Competitiveness and Universities, through the Severo Ochoa Programme for Centres of Excellence in RD project [SEV-2015-0496]
- Generalitat de Catalunya [2017 SGR 1377]
- Ramon y Cajal Contract [RYC-2017-22531]
- Spanish Ministry of Economy, Competitiveness and Universities [SEV-2015-0496-16-3, MAT2015-73839-JIN, MAT2017-85232-R]
- ESF
- Materials Sciences and Engineering Division of Basic Energy Sciences of the Office of Science of the U.S. Department of Energy
Ask authors/readers for more resources
Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films were epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. These observed periodicities agree with those expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf0.5Zr0.5O2(111)/La2/3Sr1/3MnO3(001) heterostructure.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available