Journal
CHINESE JOURNAL OF PHYSICS
Volume 64, Issue -, Pages 79-86Publisher
ELSEVIER
DOI: 10.1016/j.cjph.2020.01.006
Keywords
SiC thin films; RF magnetron sputtering; AIN buffer layer; Optical band gap; Adhesion strength
Categories
Funding
- Physical-Chemical Materials Analytical & Testing Center of Shandong University at Weihai
- Key R&D project of Shandong Province [2018GGX102020]
- Program of Science and Technology of Suzhou [SYG201847]
- Shandong Province Natural Science Foundation [ZR2018QEM002]
- China Postdoctoral Science Foundation [2019M651199]
- Young Scholars Program of Shandong University at Weihai
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SiC is widely used in various mechanical applications as a protective film because of its strength, thermal stability and good mechanical hardness. Here, amorphous SiC thin films with AlN as a buffer layer were deposited on glass and Si substrates through RF magnetron sputtering at different RF powers. The influence of the AlN buffer layer thickness on the morphological and the mechanical properties of the composite films was investigated. Results demonstrate that the AlN buffer layer can effectively improve the adhesion strength of SiC thin films, which has increased gradually from 26.78 N to 37.66 N. The transmittance of SiC thin films was measured using a UV-Vis-NIR spectrophotometer over a spectral range of 300-1200 nm. The average transmittance of SiC films decreases with increasing RF power, and their optical band gap values have varied from 3.31 eV to 3.50 eV.
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