Related references
Note: Only part of the references are listed.High temperature (300°C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs
Zeyang Ren et al.
APPLIED PHYSICS LETTERS (2020)
Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001)
Shozo Kono et al.
DIAMOND AND RELATED MATERIALS (2019)
Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
J. Canas et al.
APPLIED SURFACE SCIENCE (2018)
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance
T. T. Pham et al.
JOURNAL OF APPLIED PHYSICS (2018)
Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs
Marina Gutierrez et al.
NANOMATERIALS (2018)
Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity
Yu Yang et al.
JOURNAL OF APPLIED PHYSICS (2017)
Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy
A. Marechal et al.
APPLIED PHYSICS LETTERS (2017)
Deep depletion concept for diamond MOSFET
T. T. Pham et al.
APPLIED PHYSICS LETTERS (2017)
Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3
Moshe Tordjman et al.
APPLIED PHYSICS LETTERS (2017)
Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface
S. Kono et al.
DIAMOND AND RELATED MATERIALS (2017)
Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
Tsubasa Matsumoto et al.
SCIENTIFIC REPORTS (2016)
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor
A. Marechal et al.
APPLIED PHYSICS LETTERS (2015)
Calculations of electron inelastic mean free paths. X. Data for 41 elemental solids over the 50eV to 200keV range with the relativistic full Penn algorithm
H. Shinotsuka et al.
SURFACE AND INTERFACE ANALYSIS (2015)
Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy
Kazutoshi Takahashi et al.
APPLIED PHYSICS LETTERS (2014)
C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation
H. Kawarada et al.
APPLIED PHYSICS LETTERS (2014)
Metal oxide semiconductor structure using oxygen-terminated diamond
G. Chicot et al.
APPLIED PHYSICS LETTERS (2013)
Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
J. W. Liu et al.
APPLIED PHYSICS LETTERS (2012)
Surface transfer doping of hydrogen-terminated diamond by C60F48: Energy level scheme and doping efficiency
M. T. Edmonds et al.
JOURNAL OF CHEMICAL PHYSICS (2012)
Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering
J. Musil et al.
APPLIED SURFACE SCIENCE (2010)
Atomic Layer Deposition: An Overview
Steven M. George
CHEMICAL REVIEWS (2010)
SRIM - The stopping and range of ions in matter (2010)
James F. Ziegler et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)
Surface transfer doping of semiconductors
Wei Chen et al.
PROGRESS IN SURFACE SCIENCE (2009)
Characterization of locally modified diamond surface using Kelvin probe force microscope
M Tachiki et al.
SURFACE SCIENCE (2005)
The boron acceptor in diamond
K Thonke
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2003)
Hydrogen-induced transport properties of holes in diamond surface layers
CE Nebel et al.
APPLIED PHYSICS LETTERS (2001)